JPRS (series). 54673. Effect of temperature and thermal stress fields on formation of dislocation structure in single crystals of gallium arsenide grown by Czochralski method, USSR [with bibliography]; by N. A. Avdonin, S. S. Vokhrameyev, et al.
Publication Title:
Effect of temperature and thermal stress fields on formation of dislocation structure in single crystals of gallium arsenide grown by Czochralski method, USSR [with bibliography]; by N. A. Avdonin, S. S. Vokhrameyev, et al.
Display Title:
JPRS (series). 54673. Effect of temperature and thermal stress fields on formation of dislocation structure in single crystals of gallium arsenide grown by Czochralski method, USSR [with bibliography]; by N. A. Avdonin, S. S. Vokhrameyev, et al.
Series Title:
JPRS (series).
Corporate Agency Authors:
Joint Publications Research Service
Sort Author:
Joint Publications Research Service
Authors:
Avdonin, N. A. and Vokhrameyev, S. S.
Author place:
1000 N. Glebe Rd, Arlington, VA
Author zip:
22201
Date:
Dec. 10, 1971
Publish Date ISO Format:
1971-12-10T00:00:00Z
Publication Start:
19711210
Publication End:
19711210
Corporate/Agency Author:
Joint Publications Research Service
Publication month:
1
Publication year:
1971
SuDoc number:
Y 3.J 66:13/(nos.)
Description:
cover title, 6 p. il. 4°
Notes:
[From Doklady Akademii Nauk SSSR, v. 200, no. 2, 1971.]
Notes:
[From Doklady Akademii Nauk SSSR, v. 200, no. 2, 1971.] Φ For Sale by OTS, Commerce Dept. Paper, $3.00.