NASA technical note TN (series). D-7558. Epitaxial growth of 6H silicon carbide in temperature range 1320°-1390°C [with list of references]; by Herbert A. Will and J. Anthony Powell.
Publication Title:
Epitaxial growth of 6H silicon carbide in temperature range 1320°-1390°C [with list of references]; by Herbert A. Will and J. Anthony Powell.
Display Title:
NASA technical note TN (series). D-7558. Epitaxial growth of 6H silicon carbide in temperature range 1320°-1390°C [with list of references]; by Herbert A. Will and J. Anthony Powell.
Series Title:
NASA technical note TN (series).
Corporate Agency Authors:
National Aeronautics and Space Administration
Sort Author:
National Aeronautics and Space Administration
Authors:
Will, Herbert A. and Powell, Anthony J.
Author place:
Washington, DC
Author zip:
20546
Date:
Feb. 1974
Publish Date ISO Format:
1974-02-01T00:00:00Z
Publication Start:
19740201
Publication End:
19740228
Corporate/Agency Author:
National Aeronautics and Space Administration
Publication month:
11
Publication year:
1974
SuDoc number:
NAS 1.14:D (nos.)
Description:
cover title, [1]+14 p. il. 4°
Notes:
@ For Sale by National Technical Information Service, Springfield, VA 22151. Paper, $2.75.
Availability:
@ For Sale by National Technical Information Service, Springfield, VA 22151. Paper, $2.75.