NBS special publication. 400-13. Semiconductor measurement technology, improved infrared response technique for detecting defects and impurities in germanium and silicon pin diodes [with list of references; by]A. H. Sher.
Publication Title:
Semiconductor measurement technology, improved infrared response technique for detecting defects and impurities in germanium and silicon pin diodes [with list of references; by]A. H. Sher.
Display Title:
NBS special publication. 400-13. Semiconductor measurement technology, improved infrared response technique for detecting defects and impurities in germanium and silicon pin diodes [with list of references; by]A. H. Sher.
Series Title:
NBS special publication.
Corporate Agency Authors:
National Bureau of Standards and Commerce Dept.
Sort Author:
National Bureau of Standards
Authors:
Sher, A. H.
Author place:
Washington, DC
Author zip:
20234
Date:
Feb. 1975
Publish Date ISO Format:
1975-02-01T00:00:00Z
Publication Start:
19750201
Publication End:
19750228
Corporate/Agency Author:
National Bureau of Standards
Publication month:
11
Publication year:
1975
SuDoc number:
C 13.10:400-13
Description:
iv+20+[1] p. il. 4°
Notes:
(Electronic Technology Division, Institute for Applied Technology.) [Sponsored by Atomic Energy Commission.]
Notes:
(Electronic Technology Division, Institute for Applied Technology.) [Sponsored by Atomic Energy Commission.] * For Sale by Superintendent of Documents. Paper, 75c. • Sent to Depository Libraries. Item 247
Availability:
* For Sale by Superintendent of Documents. Paper, 75c. • Sent to Depository Libraries. Item 247